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| MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N E D Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-28H is a 1400V (VCES), 1000 Ampere Single IGBT Module. Type CM Current Rating Amperes 1000 VCES Volts (x 50) 28 E C G E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.330.01 1.840 Millimeters 130.0 110.00.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4 1.73+0.04/-0.02 44.0+1.0/-0.5 1.46+0.04/-0.02 37.0+1.0/-0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5 Mar.2002 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current (Tj 150C) Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso Ratings -40 to 150 -40 to 125 1400 20 1000 2000* 1000 2000* 5800 8.83~10.8 1.96~2.94 0.98~1.47 1600 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 100mA, VCE = 10V IC = 1000A, VGE = 15V IC = 1000A, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V, IC = 1000A, VGE = 15V IE = 10000A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.3 3.1 5355 - Max. 6.0 0.5 8.0 4.5 - - 4.0 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 1000A, diE/dt = -2000A/s IE = 1000A, diE/dt = -2000A/s VCC = 800V, IC = 1000A, VGE1 = VGE2 = 15V, RG = 3.3 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 10.5 Max. 200 70 40 800 2000 1200 650 300 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.022 0.050 0.018 Units C/W C/W C/W Mar.2002 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2000 Tj = 25C 2000 14 15 13 VCE = 10V Tj = 25C Tj = 125C VCE(sat), (VOLTS) 5 VGE = 15V Tj = 25C Tj = 125C 1600 IC, (AMPERES) VGE = 20V 12 IC, (AMPERES) 1600 4 1200 11 1200 3 800 10 800 2 400 9 8 400 1 0 0 2 4 6 8 10 VCE, (VOLTS) 0 0 4 8 12 16 20 VGE, (VOLTS) 0 0 400 800 1200 1600 2000 IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 104 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 103 VGE = 0V 8 VCE(sat), (VOLTS) IC = 2000A IE, (AMPERES) 6 IC = 1000A 103 102 Cies 4 102 101 Coes 2 IC = 400A Cres 0 0 4 8 12 16 20 VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 VEC, (VOLTS) 3.0 3.5 4.0 100 10-1 100 VCE, (VOLTS) 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -2000A/sec Tj = 25C REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 103 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 1000A Tj = 25C VCC = 800V VCC = 600V td(off) SWITCHING TIME, (ns) 16 103 tf t d(on) trr 12 102 Irr 102 102 8 tr VCC = 800V VGE = 15V RG = 3.3 Tj = 125C 4 101 101 102 103 104 101 101 102 103 101 104 0 0 2000 4000 6000 8000 10000 GATE CHARGE, QG, (nC) COLLECTOR CURRENT IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) Mar.2002 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.022C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.05 C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Mar.2002 |
Price & Availability of CM100HA-28H
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